Net Charge for Defect Formation Energy
Asked by
Charith Ravana DeSilva
Dear all,
I am currently trying to calculate the defect formation energy of GaAs, specifically with a q=-3 Ga-vacancy.
To implement this charge defect, I am removing a Ga-atom from the pristine system and using the NetCharge function to add a -3 net charge to the system (i.e. NetCharge -3.0).
I am then doing a CG-relaxation of this defect-GaAs supercell to get the total Energy.
In the manual, there is a warning against using the NetCharge function for anything other than molecules/atoms. So my question is will this idea work for dealing with charged defects in supercells of GaAs or any other crystal system? Or is there
a better way through Siesta to deal with charged defects.
Thank you for your help.
Question information
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- English Edit question
- Status:
- Solved
- For:
- Siesta Edit question
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- Solved by:
- Alberto Garcia
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